PURPOSE: To make it possible to perform electrical connecting work and sealing work simultaneously, by arranging a substrate, which has a hole that is exposed to an external atmosphere, and a chemical and physical quantity transducer part on one main surface, and bonding and fixing an external taking out electrode, an extracting electrode, and first and second bonding parts.
CONSTITUTION: P type boron is diffused in an N type single crystal silicon cubstrate 101, and a photodiode 102 is formed as a photoelectric transducer part. An insulating layer 103 comprising SiO2 and Si3N4 is formed. A filter, a reflection preventing film, and the like are formed at the upper or lower part of the insulating layer 103 when they are specifically required. A second bonding part 104 is formed on the insulating layer 103 so as to enclose the photodiode 102. An external taking out electrode 105 from the photodiode 102 as the photoelectric transducer part is formed at the outside of the second bonding part 104. Solder layers 106 are formed on the second bonding part 104 and the external taking out electrode 105.
JPS566128A | 1981-01-22 | |||
JPS53142887A | 1978-12-12 |
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