PURPOSE: To curtail the power consumption, to curtail a telephone set DC resistance, and to curtail the number of parts by constituting the titled circuit of a field effect transistor.

CONSTITUTION: A dial pulse sending-out circuit is constituted by using the field effect transistor FET of a high dielectric strength multicurrent capacity containing the field effect transistor FET of a VMOS type. As for a call current, the polarity is determined by a diode bridge 1. At the time of executing a call exchange, when a field effect transistor 2 and a field effect transistor 3 are set to an off-state and an on-state, respectively, a call current flows to a talking circuit 4 and the call exchange can be executed. On the other hand, at the time of sending out a dial pulse, the field effect transistor 3 is set to an off-state, and after a current to the talking circuit 4 has been stopped, the field effect transistor 2 is allowed to repeat on and off-states, by which the dial pulse is generated between trunk line terminals 5, 6.