Title:
DICING METHOD
Document Type and Number:
Japanese Patent JP2023073868
Kind Code:
A
Abstract:
To improve wafer splittability by facilitating uniform crack control in stealth dicing of wafers.SOLUTION: A dicing method includes the steps of bonding a first wafer having a first wafer resistivity and a second wafer having a second wafer resistivity greater than the first wafer resistivity to form a bonded wafer, forming a plurality of modified regions along a dicing line by irradiating the bonded wafer with a laser while changing the focal length in the thickness direction of the wafer, and performing an expanding process on the bonded wafer in which the modified region is formed, and dicing the bonded wafer on the dicing line.SELECTED DRAWING: Figure 4
Inventors:
YASUKAWA TETSURO
SHIBATA TAKESHI
SHIBATA TAKESHI
Application Number:
JP2021186603A
Publication Date:
May 26, 2023
Filing Date:
November 16, 2021
Export Citation:
Assignee:
CANON KK
International Classes:
H01L21/301
Attorney, Agent or Firm:
Patent Attorney Corporation Shuwa Patent Office