Title:
DIELECTRIC ELEMENT AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
Japanese Patent JP2002151657
Kind Code:
A
Abstract:
To provide a dielectric element, capable of effectively suppressing the diffusion of oxygen to an area positioned below a lower electrode at heat treatment for sintering an oxide-based dielectric film.
This dielectric element is provided with the lower electrode, provided with an IrSiN film 14 with a function for suppressing diffusion of oxygen, an SBT film 19 as the oxide-based dielectric film formed on the lower electrode and an SiN film 17 with the function of suppressing the diffusion of oxygen, arranged in regions other than the lower electrode.
Inventors:
MATSUSHITA SHIGEHARU
HONMA KAZUYA
HONMA KAZUYA
Application Number:
JP2000340045A
Publication Date:
May 24, 2002
Filing Date:
November 08, 2000
Export Citation:
Assignee:
SANYO ELECTRIC CO
International Classes:
H01L27/105; H01L21/02; H01L21/8242; H01L21/8246; H01L27/108; H01L21/314; H01L21/316; H01L21/318; (IPC1-7): H01L27/105; H01L27/108; H01L21/8242
Attorney, Agent or Firm:
Hirokazu Miyazono
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