Title:
DIELECTRIC ELEMENT AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2002231903
Kind Code:
A
Abstract:
To provide a dielectric element capable of obtaining a satisfactory element characteristic by suppressing deterioration of characteristics of oxide series dielectric film caused by hydrogen.
The dielectric element comprises a capacitor lower electrode including IrSiN film 20, a capacitor insulation film including a ferroelectric SBT film (oxide series dielectric film) 22, and a capacitor upper electrode including IrSiN film 23. The Ir can be preferably replaced by Pt, Ru, Re, Ni, Co, or Mo. The ferroelectric may also be surrounded by, in addition to the upper and lower electrodes, a second hydrogen impenetrable insulation film including any of silicon nitride film, silicon oxide nitride film, or aluminum oxide.
Inventors:
MATSUSHITA SHIGEHARU
GESHI TATSURO
GESHI TATSURO
Application Number:
JP2001029147A
Publication Date:
August 16, 2002
Filing Date:
February 06, 2001
Export Citation:
Assignee:
SANYO ELECTRIC CO
International Classes:
H01L27/04; H01L21/02; H01L21/316; H01L21/822; H01L21/8242; H01L21/8246; H01L27/105; H01L27/108; (IPC1-7): H01L27/105; H01L21/316; H01L27/04; H01L21/822; H01L27/108; H01L21/8242
Attorney, Agent or Firm:
Hirokazu Miyazono