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Title:
DIELECTRIC THIN FILM AND DIELECTRIC THIN FILM ELEMENT AND THEIR MANUFACTURE
Document Type and Number:
Japanese Patent JP3399079
Kind Code:
B2
Abstract:

PURPOSE: To provide a dielectric thin film and a dielectric thin film element, having a high dielectric constant and small tanδ in a TiO2 thin film, and to provide a method of manufacturing the dielectric thin film and dielectric thin film element.
CONSTITUTION: A dielectric thin film element is constituted by forming a platinum film 4 as a lower electrode, dielectric thin film 5 and an Ag electrode 6 as an upper electrode, on a substrate 13. A component of the dielectric thin film 5 is formed of composition adding 0.1 to 0.5mol% Mn to TiO2, and the dielectric thin film 5 is manufactured by a CVD method, to perform adding Mn simultaneously with film molding TiO3.


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Inventors:
Takanori Nakamura
You Ando
Yutaka Takeshima
Kunisaburo Banno
Application Number:
JP6619194A
Publication Date:
April 21, 2003
Filing Date:
April 04, 1994
Export Citation:
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Assignee:
MURATA MANUFACTURING CO.,LTD.
International Classes:
C23C16/40; H01B3/00; H01B3/12; H01B19/00; H01G4/12; (IPC1-7): H01B3/00; C23C16/40; H01B3/12; H01B19/00; H01G4/12
Domestic Patent References:
JP4929830A
JP425105A



 
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