Title:
【発明の名称】半導体記憶装置およびその製造方法
Document Type and Number:
Japanese Patent JP3141861
Kind Code:
B2
Abstract:
The thickness of the silicon oxide film covering the upper surface of the word lines 111 is thinner than the thickness of the insulation film spacer 127a covering the side of the gate electrode, and in reflection of this phenomenon, the step of the upper surface of the BPSG film 133 becomes smaller than +E,fra 1/2+EE of the depth of focus DOF of the KrF excimer laser and bit lines 137a are formed which have a narrower width and interval than the wavelength of the KrF excimer laser free from the disconnection and the short circuit. As a consequence, bit lines have narrower widths and interval than the wavelength of the exposure light without sacrificing the productivity.
Inventors:
Ryoichi Nakamura
Application Number:
JP30912598A
Publication Date:
March 07, 2001
Filing Date:
October 29, 1998
Export Citation:
Assignee:
NEC
International Classes:
H01L21/316; H01L21/8242; H01L27/108; (IPC1-7): H01L27/108; H01L21/316; H01L21/8242
Domestic Patent References:
| JP5218344A | ||||
| JP5291530A | ||||
| JP3191569A | ||||
| JP11186522A | ||||
| JP992794A |
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)