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Title:
DIGITAL SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
Document Type and Number:
Japanese Patent JPS5868961
Kind Code:
A
Abstract:

PURPOSE: To reduce the number of source voltage terminals for the titled device by a method wherein a unidirectional element is provided between a signal terminal and one of the internal source voltage terminals.

CONSTITUTION: In the IC of MOS dynamic type PAM and the like, a source vltage terminal VDD only is provided without using a source terminal VSS which is used to supply earth voltage. The unidirectional element such as MOS diodes D1∼D7 and the like is connected to each signal terminal, and ground potential is supplied to the IC. Among input signals, either of address signals A0 and A1 is in low level unless zero address is selected. The ground potential can be supplied to the IC at all times by having the terminal DIN in low level when a writing-in operation is performed in the state wherein zero address is selected.


Inventors:
KIZAKI TAKESHI
IIJIMA HAJIME
Application Number:
JP16721381A
Publication Date:
April 25, 1983
Filing Date:
October 21, 1981
Export Citation:
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Assignee:
HITACHI LTD
International Classes:
G11C11/401; G11C5/14; H01L27/10; H01L29/78; (IPC1-7): G11C11/34; H01L27/10; H01L29/78
Attorney, Agent or Firm:
Toshiyuki Usuda



 
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