To improve static damage endurance of a liquid crystal display device having a thin film transistor and a storage capacitor.
An edge E2 along a row direction (a lateral direction in the figure) of the second semiconductor layer 12 is placed outside an edge E3 along the row direction of the storage capacitor line 122. The edge E2 of the second semiconductor layer 12 is nearer to the first semiconductor layer 10. A gate insulating film 12 covering the edge E2 of the second semiconductor layer 12 is not covered with the storage capacitor line 122. A right side edge E5 of the second semiconductor layer 12 is first extended straight in a column direction from a contact forming region 12A, then midway bent at a right angle into the row direction, and further bent into the column direction to intersect with the storage capacitor line 122 at an intersection P2.
AOTA MASAAKI
ONOKI TOMOHIDE
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