Title:
DISPLAY DEVICE
Document Type and Number:
Japanese Patent JP2016139128
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a display device having a high aperture ratio or a semiconductor device having an element with a large area.SOLUTION: A TFT channel forming region having a multi-gate structure is provided below wiring disposed between neighboring pixel electrodes 107 (or electrodes of an element). A channel width direction of a plurality of the channel forming regions is a direction parallel to a length direction of a shape of the pixel electrode 107. The channel width is longer than the channel length, so that an area of the channel forming region is increased.SELECTED DRAWING: Figure 1
Inventors:
KATO MIZUKI
Application Number:
JP2016004017A
Publication Date:
August 04, 2016
Filing Date:
January 13, 2016
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
G09F9/30; H01L21/336; H01L21/8242; H01L27/108; H01L27/146; H01L27/32; H01L29/786; H01L51/50; H05B33/02; H05B33/26; H05B44/00
Domestic Patent References:
| JP2005157266A | 2005-06-16 | |||
| JP2006189852A | 2006-07-20 | |||
| JP2003108036A | 2003-04-11 | |||
| JP2005128574A | 2005-05-19 | |||
| JP2003015548A | 2003-01-17 | |||
| JP2003084689A | 2003-03-19 | |||
| JP2006119618A | 2006-05-11 |
Foreign References:
| WO2004049286A1 | 2004-06-10 |