Title:
距離センサ及び距離画像センサ
Document Type and Number:
Japanese Patent JP5616099
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a range sensor and a range image sensor using a silicon substrate which have practically sufficient sensitivity characteristics to a wavelength band including near-infrared wavelength.SOLUTION: The range image sensor 1 includes: a semiconductor substrate 2 having a first principal surface and a second principal surface facing each other; a photogate electrode PG and a first and a second gate electrodes TX1 and TX2 provided on the first principal surface; and a first and a second semiconductor regions FD1 and FD2 for respectively reading out charges flowing from a region immediately below the photogate electrode PG into regions immediately below the first and second gate electrodes TX1 and TX2. The semiconductor substrate 2 has a high-concentration layer 21 on the second principal surface side, and irregular unevenness 22 is formed at least on a region of the second principal surface facing the region immediately below the photogate electrode PG. The region of the second principal surface facing the region immediately below the photogate electrode PG is optically exposed.
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Inventors:
間瀬 光人
鈴木 高志
山崎 智浩
鈴木 高志
山崎 智浩
Application Number:
JP2010085202A
Publication Date:
October 29, 2014
Filing Date:
April 01, 2010
Export Citation:
Assignee:
浜松ホトニクス株式会社
International Classes:
G01S17/89; G01C3/06; G01S7/481; G01S17/10; H01L27/146
Attorney, Agent or Firm:
Yoshiki Hasegawa
Shiro Terasaki
Ishida 悟
Shiro Terasaki
Ishida 悟