Title:
DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3479925
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a distributed feedback semiconductor laser in which the linearity of an I-L characteristic is made good by a method wherein a diffraction grating whose coupling coefficient becomes large toward the front edge from the rear edge is formed by a simple means and the distribution of an optical intensity in the direction of a resonator is flattened.
SOLUTION: A diffraction grating is provided in an InGaAs diffraction grating layer 13 which is formed in such a way that its thickness is reduced and changed along a laser stripe and toward the opposite edge side from the output edge side of the laser stripe and which acts as a resonator.
Inventors:
Hiromitsu Kawamura
Application Number:
JP21433895A
Publication Date:
December 15, 2003
Filing Date:
August 23, 1995
Export Citation:
Assignee:
富士通株式会社
International Classes:
H01S5/00; H01S5/12; (IPC1-7): H01S5/12
Domestic Patent References:
| JP2280394A | ||||
| JP5102597A | ||||
| JP6310806A | ||||
| JP6196798A | ||||
| JP3198392A | ||||
| JP4505687A |
Attorney, Agent or Firm:
Shoji Kashiwaya (1 person outside)