Title:
FORMATION OF SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JP3116085
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To form a semiconductor element having excellent characteristics and its circuit on a substrate with high accuracy at a low temperature through simple processes.
SOLUTION: A method for forming semiconductor element includes a process in which at least one strippable layer 20 which, preferably, has voids at, at least, part of the layer 20 is provided between a film structure 30 composed of a single layer or a plurality of layers and a substrate 10 which supports the structure 30 for stripping off the film structure 30 from the substrate 10 and another process in which the structure 30 is stripped off from the substrate 10 by removing the strippable layer 20 after at least part of the structure 30 is formed.
Inventors:
Toshiyuki Samejima
Application Number:
JP25095297A
Publication Date:
December 11, 2000
Filing Date:
September 16, 1997
Export Citation:
Assignee:
Tokyo University of Agriculture and Technology
International Classes:
H01L21/302; H01L21/02; H01L21/20; H01L21/203; H01L21/205; H01L21/306; H01L21/336; H01L21/762; H01L21/77; H01L21/84; H01L27/12; H01L29/786; H01L31/04; (IPC1-7): H01L21/205; H01L21/20; H01L21/203; H01L21/302; H01L21/306; H01L21/336; H01L27/12; H01L29/786; H01L31/04
Domestic Patent References:
| JP7226528A | ||||
| JP5315255A | ||||
| JP5283722A | ||||
| JP5136171A | ||||
| JP59127860A |
Attorney, Agent or Firm:
Takehiko Suzue (5 outside)
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