Title:
ドーパント導入方法および熱処理方法
Document Type and Number:
Japanese Patent JP6945703
Kind Code:
B2
Abstract:
To provide a dopant introduction method and a thermal treatment method which enable the introduction of a necessary and sufficient dopant without causing a defect and the achievement of a high activation rate.SOLUTION: A dopant introduction method comprises the steps of: forming a thin film containing a dopant on the surface of a semiconductor wafer; and rapidly heating the semiconductor wafer with the dopant-containing thin film formed thereon to a first peak temperature Ts by exposure to light from a halogen lamp to cause the dopant to diffuse from the thin film into the surface of the semiconductor wafer. The thermal diffusion by rapid heating enables the introduction of a necessary and sufficient dopant into the semiconductor wafer without causing a defect. The dopant introduction method further comprises the step of heating the surface of the semiconductor wafer to a second peak temperature Tp by exposure to flash light from a flash lamp to activate the dopant. With exposure to flash light of which the exposure time is remarkably short, a high activation rate can be achieved without causing the dopant to diffuse excessively.SELECTED DRAWING: Figure 10
Inventors:
Kazuhiko Fuse
Hideaki Tanimura
Shinichi Kato
Hideaki Tanimura
Shinichi Kato
Application Number:
JP2020158325A
Publication Date:
October 06, 2021
Filing Date:
September 23, 2020
Export Citation:
Assignee:
Screen Holdings Co., Ltd.
International Classes:
H01L21/225; F27D7/06; F27D11/02; H01L21/22; H01L21/26; H01L21/336; H01L29/78
Domestic Patent References:
| JP2016184670A | ||||
| JP2014045065A | ||||
| JP50117374A | ||||
| JP3068133A | ||||
| JP51038965A | ||||
| JP11307773A | ||||
| JP2013030773A |
Attorney, Agent or Firm:
Yoshitake Hidetoshi
Takahiro Arita
Takahiro Arita