Title:
ドーピングされた金属酸化物半導体および薄膜トランジスタとその応用
Document Type and Number:
Japanese Patent JP7424658
Kind Code:
B2
Abstract:
The present application discloses a doped metal oxide semiconductor which is an indium tin oxide or indium tin zinc oxide semiconductor doped with a rare earth oxide. Even at a small doping amount, the oxygen vacancies could be suppressed as well as the mobility be maintained; critically, the thin-films made thereof can avoid the influence of light on I-V characteristics and stability, which results in great improvement of the stability under illumination of metal oxide semiconductor devices. The present application also discloses the thin-film transistors made thereof the doped metal oxide semiconductor and its application.
Inventors:
Xu seedling
Xu Hua
Wu Wei Kei
Chen Tamfeng
Royal rock
Xu Hua
Wu Wei Kei
Chen Tamfeng
Royal rock
Application Number:
JP2021543119A
Publication Date:
January 30, 2024
Filing Date:
September 08, 2020
Export Citation:
Assignee:
South China Institute of Technology
International Classes:
H01L29/786; C01G19/00; H01L21/336; H01L21/363
Domestic Patent References:
| JP2019064858A | ||||
| JP2008243928A |
Foreign References:
| WO2019026954A1 | ||||
| WO2008117810A1 |
Attorney, Agent or Firm:
SK Patent Attorney Corporation
Akihiko Okuno
Hiroyuki Ito
Akihiko Okuno
Hiroyuki Ito