Title:
DOUBLE TERMINAL NEGATIVE RESISTANCE ELEMENT
Document Type and Number:
Japanese Patent JPS59204289
Kind Code:
A
Abstract:
PURPOSE:To enable to realize a microwave oscillator of a high efficiency with a simple structure at a low cost by a method wherein a fixed impedance to microwaves and direct current is connected between the source of an FET and a terminal electrode. CONSTITUTION:The gate G of the FET is connected to the first terminal electrode of a diode package, and the drain D to the second terminal electrode. The impedance Zs satisfying the fomula ¦Zs¦>¦Ri+1/omegaCgs¦ to microwaves and the formula Zs=Rs=¦Vgs/IS¦ in DC manner is connected between the source and the first terminal electrode. Then, a negative bias voltage is impressed on the first terminal electrode, and a positive one on the second terminal electrode. Where, Ri; represents channel resistance, omega; the angular frequency of microwave, Cgs; gate input capacitance, Rs; bias resitance, Vgs; gate-source volage, Is; source current.
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Inventors:
TORITSUKA HIDEKI
Application Number:
JP7934983A
Publication Date:
November 19, 1984
Filing Date:
May 09, 1983
Export Citation:
Assignee:
TOSHIBA KK
International Classes:
H01L47/00; H03B7/14; H03B9/12; (IPC1-7): H01L47/00; H03B7/14
Domestic Patent References:
| JPS5244185A | 1977-04-06 | |||
| JPS5258381A | 1977-05-13 | |||
| JPS4881461A | 1973-10-31 | |||
| JPS4984770A | 1974-08-14 | |||
| JPS5383558A | 1978-07-24 | |||
| JPS5673906A | 1981-06-19 | |||
| JPS5748711B2 | 1982-10-18 | |||
| JPS53108356A | 1978-09-21 | |||
| JPS54105452A | 1979-08-18 |
Attorney, Agent or Firm:
Norio Ogo (1 outside)
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