To provide DRAM including multilayered capacitors each having different capacitance.
A DRAM element includes a plurality of memory blocks composed of memory blocks 200a located at the edge and memory blocks located at the center side. Each memory block located at the edge and the adjacent memory block located at the center side share a sense amplifier 65. Each memory cell in the edge memory blocks has a data storage capacitor of which the capacitance is larger than that of the data storage capacitor of each memory cell in the central side memory blocks, and the data storage capacitor of each memory cell in the edge memory blocks has a surface region wider than that of the data storage capacitor of each memory cell in the central side memory blocks. The data storage capacitor of each memory cell in the edge memory blocks is connected to two data storage capacitors in parallel to each other, and the shape and the size of these two capacitors are the same as those of the data storage capacitor used in each memory cell in the central side memory blocks.
KIM JONG SOO
Masatake Shiga
Takashi Watanabe
Shinya Mitsuhiro
Next Patent: SEMICONDUCTOR DEVICE CONTAINING DRIVE TRANSISTOR