Title:
DRIVER CIRCUIT AND ITS PREPARATION
Document Type and Number:
Japanese Patent JPH09134964
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To withstand high voltage level and materialize accurate operation while conquering restriction even if polarity conversion exists. SOLUTION: For this driver circuit 10, an epitaxial well (16) is grown, which is integrated integrally on a semiconductor substrate (11) doped with a first doping type (P) of dopant, and is provided, within itself, with a well (17) being surrounded by the insulating layer (15') having a second type of dopant and accommodating at least one transistor (M1) of a driver circuit (10). In this case, the expitaxial well (16) is connected to a transistor (M1), and between a board (11) and the epitaxial well (16), the active regions of the first (20) and second (21) active regions which accommodate the cathode terminal (CA) and the anode terminal (AN), respectively, of the diode (D) being provided with buried region (14) in close vicinity to the active regions (20 and 21) are accommodated.
More Like This:
| JPS6083351 | ERASABLE AND PROGRAMMABLE ROM DEVICE |
| JPS54109794 | MANUFACTURE OF SEMICONDUCTOR DEVICE |
| JPS6358876 | NON-VOLATILE SEMICONDUCTOR DEVICE |
Inventors:
RIKARUDO DEPETORO
ARUDO NOBETSURI
ARUDO NOBETSURI
Application Number:
JP20150496A
Publication Date:
May 20, 1997
Filing Date:
July 31, 1996
Export Citation:
Assignee:
SGS THOMSON MICROELECTRONICS
International Classes:
H01L29/78; H01L21/8234; H01L27/02; H01L27/06; H01L29/739; (IPC1-7): H01L21/8234; H01L27/06; H01L29/78
Attorney, Agent or Firm:
Hiroaki Sakai
Previous Patent: METHOD FOR PASSIVATION PRESENCE DETECTION IN INTEGRATED CIRCUIT AND CIRCUIT
Next Patent: SQUARE TYPE CELL OF CMOS TRANSISTOR ELEMENT
Next Patent: SQUARE TYPE CELL OF CMOS TRANSISTOR ELEMENT