Title:
DRY CLEANING METHOD
Document Type and Number:
Japanese Patent JP3013576
Kind Code:
B2
Abstract:
PURPOSE: To enable a remarkable increase in the absolute value of a cleaning rate by introducing N2 gas and NF3 gas simultaneously into a plasma space to perform cleaning.
CONSTITUTION: A reaction chamber 1 includes a wafer stage 3 to set a wafer 31. The wafer 31 is carried in and out through a wafer carrier port 32 capable of opening and closing by a gate valve. Gas supply ports 41, 42 are connected to a gas supply system: CVD gas in film formation and NF3 gas as the etching gas in cleaning are supplied from the gas supply port 41, and O2 gas in film formation and N2 gas in cleaning from the gas supply port 42. Hereupon in a 5-80% of the N2/NF3 proportion, a value of 800&angst /min or more can be obtained as the etching rate. Thus, NF3 is excited to promote dissociation of a fluorine radical, resulting in a shortening of cleaning time.
Inventors:
Genichi Katagiri
Application Number:
JP2033192A
Publication Date:
February 28, 2000
Filing Date:
February 06, 1992
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
B08B9/08; C23F1/40; C23F4/00; H01L21/302; H01L21/3065; H01L21/31; (IPC1-7): H01L21/3065; C23F1/40; C23F4/00
Domestic Patent References:
| JP63156533A |
Attorney, Agent or Firm:
Masaharu Shinobe