Title:
ドライエッチング装置
Document Type and Number:
Japanese Patent JP4723871
Kind Code:
B2
Abstract:
A resist damage free dry-etching process is proposed. A time duration defined until bias electric power is applied is controlled according to a plasma ignition detection signal. Wafer back-side gas pressure for a certain constant time after starting of an etching process operation is set to be lower than that as to a main etching condition. Within the time duration defined after starting of the etching process operation up to a certain constant time, CxFy gas having a lower C/F ratio than that of the main etching condition is employed, or a flow rate of the CxFy gas is lowered. The above-described parameter values are controlled every wafer according to an amount of radicals contained in the plasma being monitored. A unit for preheating a wafer is installed in a wafer transporting system.
Inventors:
Nobuyuki Negishi
Masaru Izawa
Masatsugu Arai
Masaru Izawa
Masatsugu Arai
Application Number:
JP2005030682A
Publication Date:
July 13, 2011
Filing Date:
February 07, 2005
Export Citation:
Assignee:
Hitachi High-Technologies Corporation
International Classes:
H01L21/3065; C23F1/00; C23F4/00; H01J37/32; H01L21/302; H01L21/311
Domestic Patent References:
| JP9064159A | ||||
| JP2003229411A | ||||
| JP2005072518A |
Foreign References:
| WO1999011103A1 |
Attorney, Agent or Firm:
Ichiro Suzuki