Title:
DRY ETCHING GAS FOR SEMICONDUCTOR PRODUCTION, AND METHOD FOR PRODUCING THE SAME
Document Type and Number:
Japanese Patent JP2007302663
Kind Code:
A
Abstract:
To provide a method for producing high-purity C5F8dry etching gas usable for VISI or ULSI by using C5Cl8as a raw material by a continuous process.
The dry etching gas for semiconductor production containing ≥99.995 vol.% C5F8, ≤50 vol.ppm nitrogen gas, ≤5 vol.ppm oxygen gas, ≤5 wt.ppm water component and ≤5 wt.ppb metal components is continuously produced by a continuation process comprising a step for reacting octachlorocyclopentene with KF so as to carry out a countercurrent catalytic reaction to keep the continuous reaction to afford a crude product having 50-80 vol.% content of the octafluorocyclopentene and a second step for obtaining the high-purity octachlorocyclopentene by removing a low-boiling point organic materials having the boiling points lower than that of the octafluorocyclopentene by subjecting the obtained crude product to a fractional distillation by a low-boiling point distillation column, and subjecting the obtained reaction product to a fractional distillation by a high-boiling point distillation column to collect the octafluorocyclopentene in a gas shape.
COPYRIGHT: (C)2008,JPO&INPIT
Inventors:
JI HAE SEOK
CHO OOK JAE
RYU JAE GUG
YANG JONG YEOL
AHN YOUNG HOON
KIM BONG SUK
KIM DONG HYUN
Application Number:
JP2007124396A
Publication Date:
November 22, 2007
Filing Date:
May 09, 2007
Assignee:
ULSAN CHEMICAL CO LTD
International Classes:
C07C17/20; C07C17/383; C07C23/08; H01L21/3065
Domestic Patent References:
Attorney, Agent or Firm:
Yoshihiro Kodama
Sosuke Sato
Zentaro Hasebe
