DRY ETCHING METHOD AND DRY ETCHING APPARATUS

Japanese Patent JP2012009737

A

To provide a dry etching method and a dry etching apparatus that can achieve an excellent etching characteristic with reducing the cost of facilities.

In a dry etching method, first reaction gas containing hydrogen and second reaction gas containing fluorine are brought into contact with a heating element 110 formed of nickel to generate hydrogen radicals and fluorine radicals, the hydrogen radicals and the fluorine radicals are reacted with the first reaction gas and the second reaction gas to generate etching gas, and a silicon oxide layer on a substrate is etched with the etching gas. Accordingly, the facilities and power required to generate the radicals can be reduced as compared with a conventional radical source using microwaves. Furthermore, the durability of the heating element 110 to the reaction gas can be enhanced and a stable etching characteristic can be maintained.

SUZUKI NAO
MA UN-GYONG
HIGUCHI YASUSHI

JP2010146133A

January 12, 2012

June 28, 2010

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ULVAC CORP

H01L21/302; H01L21/304; H01L21/3065

JP2007317696A	2007-12-06
JP2002170813A	2002-06-14
JP2000073172A	2000-03-07
JP2004165445A	2004-06-10

Junichi Omori
Ori Akira

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