DRY ETCHING METHOD - Toshiba Corporation

Title:

DRY ETCHING METHOD

Document Type and Number:

Japanese Patent JP3260044

Kind Code:

B2

Abstract:

PURPOSE: To dry-etch a film consisting essentially of group VIA elements in periodic table at a high rate and selectivity by using a gas contg. a compd. of nitrogen and oxygen and a compd. of oxygen and hydrogen.
CONSTITUTION: A film consisting essentially of group VIA elements in periodic table, especially Cr, Mo and W, is formed on a substrate. The film is dry-etched by using a gas contg. a compd. of nitrogen and oxygen such as NO2 formed by converting a gaseous mixture of O2 and N2 to plasma and a compd. of oxygen and hydrogen such as H2O. By this method, since the film consisting essentially of Cr, Mo and W is etched with high slectivity to the silicon oxide film, a highly reliable wiring is formed.

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Inventors:

Renpei Nakata
Narihiko Kaji
Riichiro Aoki

Application Number:

JP23392994A

Publication Date:

February 25, 2002

Filing Date:

September 29, 1994

Export Citation:

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Assignee:

Toshiba Corporation

International Classes:

C23F1/12; C23F4/00; H01L21/302; H01L21/3065; (IPC1-7): C23F4/00; H01L21/3065

Domestic Patent References:

JP1196828A
JP5174705A
JP53136966A
JP3295232A

Attorney, Agent or Firm:

Hideaki Togawa

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