Title:
DRY ETCHING METHOD
Document Type and Number:
Japanese Patent JPH01183125
Kind Code:
A
Abstract:
PURPOSE:To etch tantalum oxide rapidly and excellently with a selection ratio to a resist enhanced by a method wherein an anode coupling type etching device is used and gas containing CnFm is used as the etching gas. CONSTITUTION:A specimen 13 on which a tantalum oxide film or a multi-layer film containing tantalum oxide is formed is fixed to a ground electrode 12 on an anode coupling type dry etching device. Gas containing CnFm (n=1-4, m=4-8) is fed into the anode coupling type dry etching device as etching gas, and the tantalum oxide film or the multi layer film containing tantalum oxide of the specimen 13 is etched by generating plasma between the electrodes, suppose that the gas containing CnFm is a mixture gas of CF4O2, and that the multi-layer film is made of an amorphous silicon film or hydrogenated amorphous silicon formed either on or under an oxide tantalum film, this improves the selection ratio of tantalum oxide with respect to a resist, enabling rapid and excellent etching.
Inventors:
HOUCHIN RIYUUZOU
Application Number:
JP806288A
Publication Date:
July 20, 1989
Filing Date:
January 18, 1988
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L21/302; H01L21/3065; (IPC1-7): H01L21/302
Domestic Patent References:
| JPS60152031A | 1985-08-10 | |||
| JPS57210631A | 1982-12-24 | |||
| JPS5690978A | 1981-07-23 |
Attorney, Agent or Firm:
Yoshihiro Morimoto
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