Title:
DRY ETCHING METHOD
Document Type and Number:
Japanese Patent JPS58114433
Kind Code:
A
Abstract:
PURPOSE:To prevent the exfoliation of a metallic mask pattern and thus obtain a fine pattern by a method wherein, after metallic films are superposed in multi layers on an organic film, and the part except for the metallic film of the lowermost layer is etched and removed by a dry system resluting in pattern formation, it is treated in a chemical solution. CONSTITUTION:A polyimide film 2 is applied on an Si substrate 1 and calcined. Next, a double layer film of C 21 and Al 22 is evaporated, then a resist mask 4 is applied, and accordingly an Al medium mask 23 is formed by a CCl4 reactive sputter etching. When the C 21 and the polyimide 2 are etched and removed by an O ion beam, a polyimide mask 6 is completed. In such a constitution, even when a resist residue treatment is performed by the solution wherein resist exfoliation liquid is diluted with pure water to 1:1, the exfoliation of an Al mask does not generate, and therefore a fine pattern can be formed in the same manner. Ti, Si, Mo, etc. or the double and three layer structure of these with C are also effective.
Inventors:
OKADA KOUICHI
TSUGE HISANAO
TSUGE HISANAO
Application Number:
JP21033681A
Publication Date:
July 07, 1983
Filing Date:
December 28, 1981
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L21/302; H01L21/027; H01L21/3065; (IPC1-7): H01L21/302
Domestic Patent References:
| JPS5596655A | 1980-07-23 | |||
| JPS55140231A | 1980-11-01 |
Attorney, Agent or Firm:
Uchihara Shin