DRY ETCHING METHOD - ASAHI GLASS CO LTD

Title:

DRY ETCHING METHOD

Document Type and Number:

Japanese Patent JPS6077429

Kind Code:

A

Abstract:

PURPOSE:To prevent or remove the etching residue or produced polysilicon and to suppress the etching of a semiconductor material by etching the semiconductor material with gas which contains at least C, F, O and compounds simultaneously contained as indispensable components. CONSTITUTION:Perfluoroepoxides such as CF2CF2O or perfluoro cyclic ethers such as CF2CF2CH2 is suitable gas, and a mixture of two or more gases containing mainly solely any of them or hexafluoropropylene oxide is employed. When trifluoromethane is mixed at the etching time of SiO2, PSG for these compounds, the formation of polymer can be particularly suppressed while holding the selectivity of the primary Si and a photoresist, and when Cl2 is mixed at the etching time of the polysilicon or metallic film, the etching of high selectivity can be performed at a high speed, and when suitable amount is mixed with hexafluoropropylene oxide, it is similarly effective.

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Inventors:

SEGAMI MAKOTO
TERASE KUNIHIKO
IIDA SHINYA
KOMATSU HIDEO

Application Number:

JP18439983A

Publication Date:

May 02, 1985

Filing Date:

October 04, 1983

Export Citation:

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Assignee:

ASAHI GLASS CO LTD
KOKUSAI ELECTRIC CO LTD

International Classes:

C09K13/08; H01L21/02; H01L21/302; H01L21/3065; H01L21/311; H01L21/3213; (IPC1-7): C09K13/08

Domestic Patent References:

JPS5359368A	1978-05-29
JPS58150429A	1983-09-07

Attorney, Agent or Firm:

Akira Uchida

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