DRY SYSTEM THIN FILM PROCESS EQUIPMENT

Title:

DRY SYSTEM THIN FILM PROCESS EQUIPMENT

Document Type and Number:

Japanese Patent JPH05234903

Kind Code:

A

Abstract:

PURPOSE: To make film quality in the film thickness direction uniform, by heating gas introduced in an equipment main body.

CONSTITUTION: A gas heating means 13 is inserted in a gas piping of a first gas introducing system. Plasma forming gas like oxygen and nitrogen is sent into a plasma forming chamber 3 via the gas heating means 13, and ECR plasma is generated in the plasma forming chamber 3. The gas heating means 13 effectively heats the gas all over the flow path section by the following constitution; the flow path whose section is flat rectangular is formed by using a metal plate, and a heater for resistance heating is arranged along the outside surface of each of the facing long sides of the rectangle. Gas heating temperature is selected to be about 30°C. Thereby a film wherein irregularity of film quality does not exist in the film thickness direction and film quality is excellent can be formed.

Inventors:

NAGAO YASUAKI

Application Number:

JP3678392A

Publication Date:

September 10, 1993

Filing Date:

February 25, 1992

Export Citation:

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Assignee:

FUJI ELECTRIC CO LTD

International Classes:

C23C14/40; C30B25/14; H01L21/205; H01L21/302; H01L21/3065; H01L21/31; (IPC1-7): H01L21/205; C23C14/40; C30B25/14; H01L21/302; H01L21/31

Attorney, Agent or Firm:

Iwao Yamaguchi

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