Title:
DUSTPROOF FABRIC FOR SEMICONDUCTOR CLEAN ROOM, ITS PRODUCTION AND DUSTPROOF CLOTHES FOR SEMICONDUCTOR CLEAN ROOM
Document Type and Number:
Japanese Patent JP3639121
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To produce a dustproof fabric improved in dustproof performances and feeling of wear for a semiconductor clean room by superimposing a highly absorbing polyurethane resin film on a polyester high-density woven fabric and a woven or a knitted fabric, and to provide a method for producing the dustproof fabric.
SOLUTION: This fabric comprises a three-layer structure of a base layer 103 composed of a woven or a knitted fabric, an interlayer 102 composed of an airless type highly absorbing polyurethane resin film bonded onto the base layer 103 in dots and a skin layer 101 comprising a polyester high-density woven fabric bonded onto the interlayer 102 and containing electroconductive yarns 104 arranged at a prescribed interval in the warp yarn or the weft yarn direction. Thereby, the dustproof fabric for a semiconductor clean room excellent in shielding functions for fine particles such as moisture generated from a human body and a feeling of wear can be provided.
Inventors:
Hayashi Masahiro
Money
Kim Shuren
Ikkyo Kin
Money
Kim Shuren
Ikkyo Kin
Application Number:
JP20168198A
Publication Date:
April 20, 2005
Filing Date:
July 16, 1998
Export Citation:
Assignee:
Samsung Electronics Co.,Ltd.
International Classes:
A41D31/02; B32B5/02; B32B5/26; B32B27/12; D03D1/00; D03D15/00; A41D13/00; D04B21/00; D06N7/00; (IPC1-7): B32B5/02; A41D13/00; A41D31/02
Domestic Patent References:
| JP1207405A | ||||
| JP6034606A |
Attorney, Agent or Firm:
Masaki Hattori