PURPOSE: To provide a DRAM cell capable of storing information by a capacity smaller than that of an old DRAM cell capacitor.

CONSTITUTION: The cell encloses one capacitor C1 for storing information, one switching element SW connecting or disconnecting information of a bit line BL to the capacitor C1 by the control signal of a word line WW for recording, and one amplifying/switching element S/A amplifying a voltage stored in the capacitor C1 and a prescribed reference voltage, so as to apply to the bit line BL. Then at the time of recording information, a switch is closed through a control terminal 3 connected with the word line WW for recording, to store the voltage of the bit line BL in the capacitor C1 for storing information. On the other hand, at the time of reading information, a control voltage is applied to a word line for reading WR, and a voltage obtained by adding the voltage stored in the capacitor to this voltage and the prescribed reference voltage are made the input voltage of the amplifying/switching element to sense the output voltage of the amplifying/switching element to read stored information.