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Title:
EL DISPLAY DEVICE
Document Type and Number:
Japanese Patent JP2003317961
Kind Code:
A
Abstract:

To provide an EL (electroluminescence) display device with high operation performance and reliability.

An LDD (lightly doped drain) region for a switching TFT (thin film transistor) 4702 formed in a pixel is so formed as not to be superposed on a gate electrode and has a structure of giving a priority to the reduction of an off current value. The LDD region 4707 for a current control TFT 4704 and a power supply control TFT is so formed as to be partially superposed on the gate electrode and has a structure of giving a priority to the prevention of hot carrier filling and the reduction of the off current value. A different structured TFT is thus disposed on the same substrate according to the intended function to improve the operation performance and the reliability of the whole EL display device.


Inventors:
YAMAUCHI YUKIO
FUKUNAGA KENJI
Application Number:
JP2003027199A
Publication Date:
November 07, 2003
Filing Date:
April 25, 2000
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB
International Classes:
H01L51/50; G09F9/30; H01L21/336; H01L21/77; H01L27/12; H01L27/32; H01L29/786; H05B33/12; H05B33/14; H05B44/00; H01L27/13; (IPC1-7): H05B33/14; G09F9/30; H01L21/336; H01L29/786
Domestic Patent References:
JPH10319872A1998-12-04
JPH1173158A1999-03-16
JPH0945930A1997-02-14
JPH0595115A1993-04-16
JPH0212836A1990-01-17
JPH1145999A1999-02-16
JPH05206463A1993-08-13
Foreign References:
WO1998013811A11998-04-02



 
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