SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND FABRICATION THEREOF

Title:

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND FABRICATION THEREOF

Document Type and Number:

Japanese Patent JPH088348

Kind Code:

A

Abstract:

PURPOSE: To enhance reliability of a DRAM, along the fabrication yield thereof, in which capacitive insulating film of a capacitive element (capacitor) for storing information is composed of a ferroelectric trim.

CONSTITUTION: A polisilicon film 13 filling a contact hole 12 reaching one semiconductor region 7 of an MTSFET Qt for selecting the memory cell constitutes a storage electrode 13. The surface of the storage electrode 13 is then made flat thus depositing a PZT film 14 with low step coverage stably. Furthermore, the upper and lower layers of the PZT film 14 are provided with high melting point metal films 15, 17 in order to prevent interfacial reaction between the storage electrode or a plate electrode 16 and the PZT film 14 caused by heat treatment during the fabrication process.

Inventors:

FUJIOKA YASUHIDE
UCHIYAMA HIROYUKI
KANEKO YOSHIYUKI
SOEDA KOKI
MATSUDA NOZOMI
SAWAMURA MOTOKO

Application Number:

JP13707494A

Publication Date:

January 12, 1996

Filing Date:

June 20, 1994

Export Citation:

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Assignee:

HITACHI LTD
HITACHI HOKKAI SEMICONDUCTOR
HITACHI INSTRUMENTS ENG
HITACHI VLSI ENG

International Classes:

H01L27/04; H01L21/822; H01L21/8242; H01L21/8246; H01L27/10; H01L27/105; H01L27/108; (IPC1-7): H01L21/8242; H01L27/108; H01L27/04; H01L21/822

Attorney, Agent or Firm:

Yamato Tsutsui

Next Patent: 半導体装置