SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

Title:

SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

Document Type and Number:

Japanese Patent JP3233794

Kind Code:

B2

Abstract:

PURPOSE: To form a crystalline silicon film, which has a higher crystallinity than the crystallinity obtained by ordinary heat treatment with good productivity and that by low-temperature heat treatment by introducing an catalyst element into an amorphous film, controlling the quantity of addition precisely to a small value and with good uniformity under a board face and with good reproducibility between boards.
CONSTITUTION: An amorphous silicon film 103 is exposed to alkaline solution 105 including a catalyst element, and then by heat treatment, the catalyst element adsorbed to the surface of the amorphous silicon film is introduced into the amorphous silicon film 13, and also the amorphous silicon film 103 is crystallized.

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Inventors:

Naoki Makita
Shinji Maekawa

Application Number:

JP22702794A

Publication Date:

November 26, 2001

Filing Date:

September 21, 1994

Export Citation:

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Assignee:

Sharp Corporation

International Classes:

H01L27/146; H01L21/02; H01L21/20; H01L21/336; H01L27/12; H01L29/786; (IPC1-7): H01L21/20; H01L21/336; H01L27/12; H01L27/146; H01L29/786

Domestic Patent References:

JP7231100A

Attorney, Agent or Firm:

Shusaku Yamamoto

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