ELECTRIC MEMORY

Japanese Patent JPH02239664

A

PURPOSE: To use switching, memory of tertiary value corresponding to different resistance states of three stages by discontinuously varying a resistance value to three stages of different resistance states of a high resistance state, an intermediate resistance state and a low resistance state.

CONSTITUTION: An upper electrode 23 is provided on a substrate 21 through a complex-containing thin film 22 containing Cu-TCNQ to compose an electric element 24. When the potential of the electrode 23 is raised with respect to the substrate 21, the resistance of the film 22 maintains a relatively high resistance state up to a first threshold voltage Vth1, and is switched to an intermediate or low resistance state at the Vth1. Here, any of the intermediate and low resistance states can be arbitrarily selected by a current flowing to the element 24. That is, if the current is small, it becomes intermediate, while if the current is large, it is switched to the low resistance state. Thus, the resistance value is discontinuously varied to the different resistance states of three stages to be used as switching, memory of tertiary values.

JPH1154634	MANUFACTURE OF NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
JP4445534	Non-volatile semiconductor memory device
JP4525913	Semiconductor storage device

NISHIYAMA TOYOO
SATO CHIAKI
WAKAMATSU SEIICHI
TADOKORO KAORU

JP6040089A

September 21, 1990

March 13, 1989

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OLYMPUS OPTICAL CO

H01L21/8247; H01L27/10; H01L27/28; H01L29/788; H01L29/792; H01L49/02; H01L51/05; H01L51/30; (IPC1-7): H01L27/10; H01L29/28; H01L29/788; H01L29/792; H01L49/02

Atsushi Tsuboi (2 outside)

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