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Title:
ELECTRODE STRUCTURE, SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, THERMAL HEAD, AND THERMAL PRINTER
Document Type and Number:
Japanese Patent JP2013229491
Kind Code:
A
Abstract:

To provide an electrode structure with improved share strength.

An electrode structure C1 includes a substrate 2, an electrode 4 provided on the substrate 2 and having a mounting portion 6 on its part, a protective layer 8 provided so as to cover the portion except for the mounting portion 6 of the electrode 4, and a plated layer 10 located on the mounting portion 6 with a part located on the protective layer 8. Since dent portions 13 are provided on a top surface of the plated layer 10 located on the protective layer 8, the share strength of the electrode structure C1 can be improved, thereby providing the electrode structure with improved share strength.


Inventors:
KATO KENICHI
Application Number:
JP2012101319A
Publication Date:
November 07, 2013
Filing Date:
April 26, 2012
Export Citation:
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Assignee:
KYOCERA CORP
International Classes:
H01L21/60; B41J2/345
Domestic Patent References:
JP2009245957A2009-10-22
JP2010251631A2010-11-04
JP2011025633A2011-02-10
JP2011129669A2011-06-30
JP2000164623A2000-06-16
JP2004273958A2004-09-30
JP2008021950A2008-01-31
JP2000040868A2000-02-08
JP2007234840A2007-09-13
JP2007335629A2007-12-27
JP2013045843A2013-03-04
Foreign References:
US20120006592A12012-01-12
WO2011021317A12011-02-24



 
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