ELECTRODE STRUCTURE OF SILICON CARBIDE SEMICONDUCTOR

Title:

ELECTRODE STRUCTURE OF SILICON CARBIDE SEMICONDUCTOR

Document Type and Number:

Japanese Patent JPS6271271

Kind Code:

A

Abstract:

PURPOSE: To eliminate high temperature heat treatment after forming a deposited film by forming a titanium deposited film or a multilayer deposited film of Ti and other metal on an SiC single crystal.

CONSTITUTION: P-type and N-type impurities are doped n an SiC single crystal 1 to form a semiconductor operating element structure such as a field effect element, and Ti is deposited by resistance heating or electron beam depositing on the surface of the crystal 1 necessary to form an electrode. The electrode is formed of a Ti layer 2 patterned by a mask depositing method or etching after depositing. The layer 2 formed by the depositing exhibits strong sealability with the crystal 1, and the quality of the film becomes very dense state. Accordingly, the layer 2 is immediately wired to externally couple, thereby obtaining the electrode structure of ohmic contact. Metal 3 superposed on the layer 2 may employs in addition to aluminum Ni, Cu or other high conductive metal.

Inventors:

FURUKAWA MASAKI
SUZUKI AKIRA
SHIGETA MITSUHIRO
UEMOTO ATSUKO

Application Number:

JP21166185A

Publication Date:

April 01, 1987

Filing Date:

September 24, 1985

Export Citation:

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Assignee:

SHARP KK

International Classes:

H01L21/28; H01L29/24; H01L29/43; H01L29/45; H01L33/34; H01L33/40; (IPC1-7): H01L29/46

Domestic Patent References:

JPS50134785A	1975-10-25
JPS4979462A	1974-07-31
JPS5057784A	1975-05-20
JPS5864066A	1983-04-16
JPS5380966A	1978-07-17

Attorney, Agent or Firm:

Umeda Masaru (2 outside)

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