Title:
ELECTROLUMINESCENT MATERIAL, SEMICONDUCTOR ELECTROLUMINESCENT DEVICE, AND MANUFACTURE OF THEM
Document Type and Number:
Japanese Patent JP3477855
Kind Code:
B2
Abstract:
PURPOSE: To provide silicon using electroluminescent material as a base and a semiconductor device which is clear of conventional technical problems.
CONSTITUTION: Electroluminescent material and a semiconductor electroluminescent device include a mixture layer 3 formed by mixing silicon oxides doped with rare earth element ions so as to allow the material and the device to emit light at room temperature. Electroluminescence is caused by the rare earth element ions. An implant having group V or group III element of the periodic table of elements is supplied to a PN junction 3. The requirement for the obtained structure is that it should be heat-treated at a temperature ranging from 400°C to 1100°C.
Inventors:
Salvatore Yugo Campisano
Salvatore Lombardo
Giuseppe Ferra
Albert Polmann
Gerald Nicolas van den Hoven
Salvatore Lombardo
Giuseppe Ferra
Albert Polmann
Gerald Nicolas van den Hoven
Application Number:
JP27969094A
Publication Date:
December 10, 2003
Filing Date:
October 20, 1994
Export Citation:
Assignee:
Consolzio Perla Licerca Sula Microelet Ronica Nermezzo Giorno
International Classes:
H01L21/265; H01L33/34; H05B33/10; H05B33/12; H05B33/18; (IPC1-7): H01L33/00; H05B33/18
Other References:
Ａｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ Ｌｅｔｔｅｒｓ，Ｖｏｌ．６３，Ｎｏ．１４，４ Ｏｃｔｏｂｅｒ １９９３，ｐｐ．１９４２−１９４４
Attorney, Agent or Firm:
Keiichi Yamamoto