To enhance precision in laying the exposure pattern of an electron beam exposure apparatus on top of an underlying pattern without causing deterioration in through put or complication of the apparatus.
The electron beam exposure apparatus 1 comprises a means for previously acquiring the underlying pattern distortion information indicative of the linear component of distortion of each underlying pattern formed in each die of a wafer 40 to be exposed, and selecting the underlying pattern distortion information depending on the scanning position of an electron beam when mask patterns formed in a plurality of pattern areas are exposed collectively to a plurality of dies, and a means for correcting the exposing position of an exposure pattern to a sample according to the underlying pattern distortion information thus selected.
Jun Tsuruta
Tetsuro Shimada
Ryu Kobayashi
Masaya Nishiyama
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