Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
ELECTRON EMISSION ELEMENT AND ITS MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2005135917
Kind Code:
A
Abstract:

To provide an electron emission element and its manufacturing method for suppressing diode light emission owing to a crack by preventing generation of the crack in an insulating layer when a cathode electrode is patterned and lowering a drive voltage as well as improving screen brightness by enhancing conductivity of the cathode electrode.

The emission element includes a first and a second substrates, disposed opposite with each other by arbitrarily spacing, at least one gate electrode formed on the first substrate, a cathode electrode formed on at least one gate electrode by holding the insulating layer and made of a layered structure with at least two layers, an electron emission source positioned in contact with the cathode electrode, at least one anode electrode formed on the second substrate, and a fluorescent screen positioned on one face of at least one anode electrode.


Inventors:
AHN SANG-HYUCK
LEE SANG-JO
Application Number:
JP2004316296A
Publication Date:
May 26, 2005
Filing Date:
October 29, 2004
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
SAMSUNG SDI CO LTD
International Classes:
H01J29/04; H01J1/30; H01J1/304; H01J1/316; H01J1/62; H01J9/02; H01J29/02; H01J29/48; H01J31/08; H01J31/12; H01J63/04; (IPC1-7): H01J1/304; H01J9/02; H01J29/04; H01J31/12
Domestic Patent References:
JP2001210223A2001-08-03
JP2003217485A2003-07-31
JPH07160204A1995-06-23
Attorney, Agent or Firm:
Miaki Kametani
Tetsuo Kanamoto