Title:
ELECTRON GUN, METHOD OF PRODUCING IT, AND ELECTRONIC APPARATUS EQUIPPED WITH IT
Document Type and Number:
Japanese Patent JP3905272
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide an electron gun having a structure of capable discharging electrons to an opposite electrode of a large area, as well as a method of producing the same and an electronic apparatus using the electron gun.
SOLUTION: On an insulating substrate of glass or the like is formed a lower layer conductor on which a conductive silicon film is then formed. Next, on the silicon film is formed a patterned nitride film. Using the nitride film as a mask, the silicon film is oxidized to form a silicon oxide. After removing the nitride film, a bias voltage is applied between the lower layer conductor and an electrode disposed opposite to the exposed silicon region under a plasma atmosphere, and current is passed through the silicon region limited by the silicon oxide to deposit diamond crystals onto the silicon region. The deposited diamond crystals are subjected to an epitaxial growth to form a diamond film. A lead electrode opposite to the diamond film is formed, and a prescribed voltage is applied between the lower conductor and the lead electrode to thereby form an electrode gun.
Inventors:
Arai Manabu
Shuichi Ono
Hideaki Tamai
Kimura
Shuichi Ono
Hideaki Tamai
Kimura
Application Number:
JP35245299A
Publication Date:
April 18, 2007
Filing Date:
December 10, 1999
Export Citation:
Assignee:
New Japan Radio Co., Ltd.
International Classes:
H01J9/02; C23C16/27; H01J1/304; H01J29/04; H01J31/12; (IPC1-7): H01J1/304; C23C16/27; H01J9/02; H01J29/04; H01J31/12
Domestic Patent References:
| JP9219145A | ||||
| JP8055574A | ||||
| JP10112257A | ||||
| JP7272618A |
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