PURPOSE: To provide an electron mobility control device capable of operation at normal temperature, in which long scattering relaxation time (high mobility) is achieved as in an electron tube and it is controlled to a desired value without using a minute structure.
CONSTITUTION: An electron mobility device includes a high-resistivity semiconductor 11 having a carrier density less than 1012cm3. The semiconductor 1 includes a cathode 21 for carrier injection, a biasing means having an anode 23 and a grid 22 for maintaining a specific average field intensity, and a gate control means for the bias means. The specific field intensity is given by {(2.h.n)1/2.ωop3/2}/{(2.π)3/2.q}≤E≤(1.2.Eg)/L where E is field intensity, h is Planck constant, ωop3/2 is optical phonon frequency, Eg is band gap energy of semiconductor, (m) is mass of the electron, and L is distance between electrodes.
HIROHATA TORU
NAKAJIMA KAZUTOSHI
IIDA TAKASHI
WARASHINA SADAHISA
SUGIMOTO KENICHI
SUZUKI TOMOKO
