PURPOSE: To obtain an electrophotographic sensitive body superior in long wavelength sensitivity by forming a photosensitive layer made of an amorphous silicon contg. Ge and C on a conductive substrate.

CONSTITUTION: A p type amorphous silicon film having a dark electric conductivity of ≥10-4mho.cm-1 is formed on a conductive substrate 1 to form an electrostatic charge injection layer 2, on this layer an i-type amorphous silicon layer 3 contg. H or halogen and having a dark conductivity of ≤10-12mho. cm-1, an amorphous silicon layer 4 doped with Ge and C, and an i-type amorphous silicon layer 5 same as the layer 3 are laminated to obtain a photosensitive layer 6, and further on this layer 6 an amorphous silicon layer 7 having a dark conductivity of ≤10-14mho.cm-1 is formed. As a result, both of an optical band gap and film strain can be reduced and cracks and film peeling from the substrate 1 can be prevented.