To provide an electrostatic chuck device which enables uniform plasma processing of a substrate surface.
Two electrodes 21, 22 formed in a flat shape are located substantially in the same plane. An insulating material 3 is provided on the surface of each of the electrodes 21, 22, and a substrate 4 is arranged on the surface of the insulating material 3. When a voltage is applied between the electrodes 21, 22 to perform electrostatic attraction, the spacing between the two electrodes 21, 22 is caused to be not greater than five times the thickness of the insulating material 3 on the electrodes 21, 22. The capacitance value between the substrate 4 and the electrodes 21, 22 becomes substantially uniform at any point, thus enabling uniform plasma processing of the surface of the substrate 4. It is preferred that the spacing between the electrodes 21, 22 is narrowed within such a range that static damage is not generated. However, in the case where the maximum applied voltage is determined, the magnitude of a current which flows on application of that voltage between the electrodes 21, 22 may be caused to be not greater than the magnitude of a predetermined leakage current.
FUJIMOTO HIDEKI
KIKUCHI MASASHI
WATANABE MIDORI
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