PURPOSE: To provide structure and manufacture which never causes step cutting or partially thins the thickness of wiring, in the emitter electrode lead-out wiring of a hetero-junction bipolar transistor(HBT).

CONSTITUTION: After formation of an emitter electrode 8 and an emitter mesa, Si3N4 film 10 is stacked, and a resist 11 is patterned, and the window of an Si3N4 film 10 is opened by dry etching, and a lead-out wiring 12 connected with it is manufactured. Hereby, the irregularity at the section in which to form an emitter electrode lead-out wiring can be made small, so an emitter electrode lead-out wiring, which never causes the step cutting of the lead wire or partially thins the thickness of the lead-out wiring, can be manufactured easily.