Title:
EPITAXIAL CROWTH METHOD
Document Type and Number:
Japanese Patent JPS5541725
Kind Code:
A
Abstract:
PURPOSE:To produce epitaxial layers of less crystalline defects by the epitaxial growth under reduced pressure by providing a phorphorus-containing semiconductor layer on the substrate and removing the entirety of the layer and surface layer of the substrate by etching. CONSTITUTION:A phosphorus-containing silicon layer 20 is provided in contact with the surface of a semiconductor substrate 10. The silicon layer 20 and the surface layer of the substrate 10 are removed by vapor-phase etching. On the remaining substrate 10, an epitaxial layer 30 of silicon is grown in vapor phase. All the defective oxidized film and impurities, such as separated iron and nickel, present in the surface of the substrate 10 which had been collected into the phosphorous-containing silicon layer 20 have been removed by the vapor-phase etcing techniques. Thus, in the epitaxial growth under reduced pressure, epitaxial layers of less crystalline defects can be obtained.
Inventors:
AKAI YOSHIO
Application Number:
JP11434378A
Publication Date:
March 24, 1980
Filing Date:
September 18, 1978
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
C30B25/02; H01L21/205; H01L21/302; H01L21/306; H01L21/322; (IPC1-7): C30B25/02; H01L21/205; H01L21/306