Title:
EPITAXIAL WAFER FOR LIGHT-EMITTING ELEMENT AND PRODUCTION METHOD OF THE SAME
Document Type and Number:
Japanese Patent JP2010126372
Kind Code:
A
Abstract:
To provide an inexpensive high-quality epitaxial wafer for a light-emitting element.
The epitaxial wafer for a compound semiconductor light-emitting element has at least an n-type clad layer 6, an active layer 8 and a p-type clad layer successively layered on an n-type substrate 2, wherein the wafer is produced by using an n-type substrate 2 as the n-type substrate 2, which is almost circular, having a diameter (a) and thickness (b) of the substrate satisfying (b)/(a)≤0.0047.
COPYRIGHT: (C)2010,JPO&INPIT
Inventors:
TAKEUCHI TAKASHI
OMURA MASAKAZU
OMURA MASAKAZU
Application Number:
JP2008299632A
Publication Date:
June 10, 2010
Filing Date:
November 25, 2008
Export Citation:
Assignee:
HITACHI CABLE
International Classes:
C30B25/18; C23C16/30; C30B25/14; C30B29/40; H01L21/205; H01L33/02
Attorney, Agent or Firm:
Nobuo Kinutani