Title:
EPITAXIAL WAFER AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2015082573
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide an epitaxial wafer that allows manufacturing a light-receiving element preventing a dark current and ensuring sensitivity, and to provide a method of manufacturing the epitaxial wafer.SOLUTION: An epitaxial wafer of the present invention includes: a substrate of a group III-V semiconductor; and a multiple quantum well located on the substrate and composed of a plurality of pairs of a first layer and a second layer. The multiple quantum well contains antimony (Sb) as a constituent element, and the sum of sulfur (S), selenium (Se), and tellurium (Te) contained as impurities in the multiple quantum well is 5E15 cmor less.
Inventors:
FUJII KEI
NISHIZUKA KOJI
KYONO TAKASHI
SHIBATA KAORU
AKITA KATSUSHI
NISHIZUKA KOJI
KYONO TAKASHI
SHIBATA KAORU
AKITA KATSUSHI
Application Number:
JP2013219597A
Publication Date:
April 27, 2015
Filing Date:
October 22, 2013
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
H01L21/20; H01L31/10
Domestic Patent References:
| JP2007137883A | 2007-06-07 | |||
| JP2006104189A | 2006-04-20 | |||
| JP2003064090A | 2003-03-05 | |||
| JPH02181978A | 1990-07-16 |
Foreign References:
| WO2011016309A1 | 2011-02-10 |
Attorney, Agent or Firm:
Patent Corporation Heart Cluster
Seiichi Watanabe
Seiichi Watanabe