Title:
EPITAXY
Document Type and Number:
Japanese Patent JPS62292694
Kind Code:
A
Abstract:
PURPOSE:To generate a crack at a linear scratch position and to improve the yield of elements by using a substrate having a linear scratch only on one of the principal planes of the substrate at the time of epitaxially growing a crystal having a chemical composition different from that of the substrate on the substrate. CONSTITUTION:A substrate 1 with a linear scratch 3 scored by a glass cutter, etc., only on one of the principal planes of the substrate 1 is used, when a crystal having a chemical composition different from that of the substrate is epitaxially grown on the substrate 1 to obtain an epitaxial film 2. Consequently, a crack is generated on the crystal of the epitaxial film 2 formed on the substrate 1 approximately along the linear scratch 3, hence any cracks are not generated on the part other than the scratched part, and many elements can be obtained in good yield.
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Inventors:
MINEMOTO TAKASHI
KAMATA OSAMU
ISHIZUKA SATOSHI
KAMATA OSAMU
ISHIZUKA SATOSHI
Application Number:
JP13654286A
Publication Date:
December 19, 1987
Filing Date:
June 12, 1986
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
C30B19/12; C30B29/28; H01L21/208; (IPC1-7): C30B19/12; C30B29/28; H01L21/208
Attorney, Agent or Firm:
Toshio Nakao
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