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Title:
ERBIUM-DOPED SILICON NANOCRYSTALLINE-EMBEDDED SILICON OXIDE WAVEGUIDE AND METHOD OF MANUFACTURING THE SAME, AND INTEGRATED CIRCUIT INCLUDING THE SAME
Document Type and Number:
Japanese Patent JP2009272614
Kind Code:
A
Abstract:

To provide an erbium-doped silicon nanocrystalline-embedded silicon oxide waveguide that can be manufactured by low-temerature process and can operate at 1,540 nm, and to provide a method of manufacturing the same.

The method comprises steps for: forming a bottom layer; forming an Er-doped silicon nanocrystalline-embedded silixon oxide film overlying the bottom layer, which exhibits minimum optical attenuation at about 1,540 nm; and forming a top layer overlying the Er-doped silicon oxide film. The Er-doped silicon oxide film includes steps for: depositing a silicon rich silicon oxide (SRSO) film using a high density plasma chemical vapor deposition; annealing the SRSO film; implanting Er+ ions; and thereafter annealing the Er+-doped silicon oxide film again. The silicon oxide film including the Er-doped silicon nano-crystalline has a first refractive index (n) in a range of 1.46 to 2.30. Top and bottom layers have second refractive indexes smaller than the first refractive index.


Inventors:
HAO CHAN
JOSHI POORAN CHANDRA
VOUTSAS APOSTOLOS T
Application Number:
JP2009052596A
Publication Date:
November 19, 2009
Filing Date:
March 05, 2009
Export Citation:
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Assignee:
SHARP KK
International Classes:
H01S3/17; G02B6/122; G02B6/13; H01S3/10
Domestic Patent References:
JP2005156922A2005-06-16
JP2003303985A2003-10-24
JP2003050328A2003-02-21
JP2007264164A2007-10-11
JP2007334235A2007-12-27
JP2003524879A2003-08-19
JP2005516409A2005-06-02
JP2004281972A2004-10-07
JP2000047044A2000-02-18
Foreign References:
US20040106285A12004-06-03
US20040136681A12004-07-15
WO2007087046A22007-08-02
Attorney, Agent or Firm:
Kenzo Hara International Patent Office