ERBIUM-DOPED SILICON NANOCRYSTALLINE-EMBEDDED SILICON OXIDE WAVEGUIDE AND METHOD OF MANUFACTURING THE SAME, AND INTEGRATED CIRCUIT INCLUDING THE SAME

Title:

ERBIUM-DOPED SILICON NANOCRYSTALLINE-EMBEDDED SILICON OXIDE WAVEGUIDE AND METHOD OF MANUFACTURING THE SAME, AND INTEGRATED CIRCUIT INCLUDING THE SAME

Document Type and Number:

Japanese Patent JP2009272614

Kind Code:

A

Abstract:

To provide an erbium-doped silicon nanocrystalline-embedded silicon oxide waveguide that can be manufactured by low-temerature process and can operate at 1,540 nm, and to provide a method of manufacturing the same.

The method comprises steps for: forming a bottom layer; forming an Er-doped silicon nanocrystalline-embedded silixon oxide film overlying the bottom layer, which exhibits minimum optical attenuation at about 1,540 nm; and forming a top layer overlying the Er-doped silicon oxide film. The Er-doped silicon oxide film includes steps for: depositing a silicon rich silicon oxide (SRSO) film using a high density plasma chemical vapor deposition; annealing the SRSO film; implanting Er+ ions; and thereafter annealing the Er+-doped silicon oxide film again. The silicon oxide film including the Er-doped silicon nano-crystalline has a first refractive index (n) in a range of 1.46 to 2.30. Top and bottom layers have second refractive indexes smaller than the first refractive index.

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Inventors:

HAO CHAN
JOSHI POORAN CHANDRA
VOUTSAS APOSTOLOS T

Application Number:

JP2009052596A

Publication Date:

November 19, 2009

Filing Date:

March 05, 2009

Export Citation:

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Assignee:

SHARP KK

International Classes:

H01S3/17; G02B6/122; G02B6/13; H01S3/10

Domestic Patent References:

JP2005156922A	2005-06-16
JP2003303985A	2003-10-24
JP2003050328A	2003-02-21
JP2007264164A	2007-10-11
JP2007334235A	2007-12-27
JP2003524879A	2003-08-19
JP2005516409A	2005-06-02
JP2004281972A	2004-10-07
JP2000047044A	2000-02-18

Foreign References:

US20040106285A1	2004-06-03
US20040136681A1	2004-07-15
WO2007087046A2	2007-08-02

Attorney, Agent or Firm:

Kenzo Hara International Patent Office

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