Title:
エッチング液の前処理方法、シリコン基板のエッチング方法、シリコン基板エッチング装置
Document Type and Number:
Japanese Patent JP5721606
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain an etchant processing method, a silicon substrate etching method, and a silicon substrate etching device that make it possible to perform texture formation on a surface of a silicon substrate with stability and high productivity.SOLUTION: An etchant pretreatment method that is carried out on an etchant, which is supplied to a surface of a silicon substrate to thereby form unevenness on the silicon substrate surface through wet etching, before the etchant is supplied to the silicon substrate surface, comprises: carrying out bubbling processing on the etchant containing at least one kind of organic additive for impeding etching reaction on the silicon substrate surface, water, and an alkaline reagent to thereby separate a hydrophobic impurity in the etchant to a liquid surface of the etchant.
Inventors:
Nishiyama Aya
Ikuhiro Yoshida
Nozomi Yasunaga
Yusuke Shirayanagi
Ikuhiro Yoshida
Nozomi Yasunaga
Yusuke Shirayanagi
Application Number:
JP2011237861A
Publication Date:
May 20, 2015
Filing Date:
October 28, 2011
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L21/306; H01L21/304
Domestic Patent References:
| JP2001217439A | ||||
| JP2000200767A | ||||
| JP2011173086A | ||||
| JP2002057139A |
Attorney, Agent or Firm:
Hiroaki Sakai