ETCHING METHOD AND DEVICE

Title:

ETCHING METHOD AND DEVICE

Document Type and Number:

Japanese Patent JPH0813170

Kind Code:

A

Abstract:

PURPOSE: To realize dry (vapor phase) etching with high accuracy and with high efficiency.

CONSTITUTION: An oxide conductive film is subjected to low temp. plasma etching in a reactor in which an upper electrode 31 and a lower electrode 32 are arranged while a substrate 1 is mounted on the lower electrode 32 by adding gaseous ammonia to the gas contg. lower hydrocarbon or further contg. H2.

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Inventors:

ASHIDA TOSHIKAZU

Application Number:

JP32990993A

Publication Date:

January 16, 1996

Filing Date:

November 30, 1993

Export Citation:

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Assignee:

ASHIDA KK

International Classes:

C23F4/00; H01L21/302; H01L21/3065; (IPC1-7): C23F4/00; H01L21/3065

Attorney, Agent or Firm:

Toshio Nishizawa

Next Patent: 安定化電源装置